Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because can be highly sensitive to their environment, and properties degrade nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V platform designed for neutral silicon vacancy (SiV 0 ) that circumvents the need etching substrate. Through evanescent coupling SiV near surface of diamond, will Purcell enhancement emission efficient frequency conversion telecommunication C-band. The proposed structures realized readily available fabrication techniques.